ESD protection transistors
US4760433A · kind A · utility
53Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1986 |
| Grant date | Jul 26, 1988 |
| Priority date | — |
| Expiry date | Jan 31, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A protection circuit including complementary bipolar transistors having collectors connected to an input and base and emitters connected together to a respective voltage source. The bipolar transistors are lateral transistors having a field plate over the base region and spaced laterally from the laterally spaced collector and emitter regions. The base may include increased impurity surface regions extending from the emitter and collector to the gate to increase the beta and decrease the collector-base breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.