Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency
US4766477A · kind A · utility
108Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 11, 1986 |
| Grant date | Aug 23, 1988 |
| Priority date | — |
| Expiry date | Jul 11, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/122
Abstract
A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.