Patent · US Expired

Capacitor-plate bias generator for CMOS DRAM memories

US4769784A · kind A · utility

92Cited by
6References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 19, 1986
Grant dateSep 6, 1988
Priority date
Expiry dateAug 19, 2006

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH02M3/07
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A capacitor-plate bias generator produces a voltage on the capacitor plate node which consists of a constant voltage plus the sense-level voltage. Consequently, the capacitor-plate node tracks any variations in the sense-level voltage. The constant voltage is 3V.sub.BG, or 3 times the bandgap voltage of silicon. The circuit includes a reference-voltage source which produces the sum of the sense-level voltage and V.sub.BG, and a feedback control circuit for enabling either a charge pump or a charge bleeder to regulate the capacitor-plate voltage at a level above the circuit supply voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.