Process of self aligned nitridation of TiSi.sub.2 to form TiN/TiSi.sub.2 contact
US4772571A · kind A · utility
49Cited by
6References
6Claims
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Key dates
| Filing date | May 18, 1987 |
| Grant date | Sep 20, 1988 |
| Priority date | — |
| Expiry date | May 18, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/019
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to prevent diffusion of silicon from under a titanium disilicide interconnect (1) and into an overlying aluminium layer (6), the disilicide is selectively nitrided by annealing in nitrogen at the points where interconnection between the disilicide and aluminium is required via holes (4) in a silicon dioxide layer (3). The titanium nitrode contacts (5) thus formed in a truly self-aligned manner provide a good barrier to silicon diffusion while having an acceptable low resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.