Device having strain induced region of altered bandgap
US4772924A · kind A · utility
26Cited by
3References
20Claims
0Family size
Inventors
Key dates
| Filing date | Nov 25, 1987 |
| Grant date | Sep 20, 1988 |
| Priority date | — |
| Expiry date | Nov 25, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1465
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A strained layer superlattice comprising Ge.sub.x Si.sub.1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.