Thin film FET doped with diffusion inhibitor
US4772927A · kind A · utility
142Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1986 |
| Grant date | Sep 20, 1988 |
| Priority date | — |
| Expiry date | Oct 23, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device including a MOS transistor which is formed with a source region, a drain region and a channel region by the use of polycrystalline silicon, and a method of manufacturing the semiconductor device. Ions of carbon, oxygen or/and nitrogen are introduced into a polycrystalline silicon layer over the whole area thereof, and restrain conductive ions in the source and drain regions from diffusing into the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.