Method for the manufacture of a self-aligned metal contact
US4774206A · kind A · utility
26Cited by
11References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 18, 1987 |
| Grant date | Sep 27, 1988 |
| Priority date | — |
| Expiry date | Mar 18, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The manufacture of a self-aligned gate contact having a very short gate length measuring, for example, 0.3 to 0.1 micron wherein photolithography is carried out together with isotropic deposition to produce a gate contact having an extremely low lead resistance, the method utilizing a masking element which is removed by a lift-off technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.