Josef Willer
112Patents
21h-index
78Co-inventors
93Inventor score
Filing activity: Mar 18, 1987 → Jan 9, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6180979A | Memory cell arrangement with vertical MOS transistors and the production process thereof | Electricity | 510 | Expired |
| US5994746A | Memory cell configuration and method for its fabrication | Electricity | 181 | Expired |
| US7341904B2 | Capacitorless 1-transistor DRAM cell and fabrication method | Emerging Cross-Sectional Technologies | 92 | Active |
| US6583632B2 | Method of determining very small capacitances | Physics | 84 | Expired |
| US6777725B2 | NROM memory circuit with recessed bitline | Electricity | 79 | Expired |
| US7772580B2 | Integrated circuit having a cell with a resistivity changing layer | Physics | 58 | Active |
| US5494832A | Method for manufacturing a solar cell from a substrate wafer | Emerging Cross-Sectional Technologies | 57 | Expired |
| US6734063B2 | Non-volatile memory cell and fabrication method | Electricity | 55 | Expired |
| US6191459A | Electrically programmable memory cell array, using charge carrier traps and insulation trenches | Electricity | 53 | Expired |
| US6686242B2 | Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array | Electricity | 48 | Expired |
| US6118159A | Electrically programmable memory cell configuration | Electricity | 48 | Expired |
| US6794249B2 | Method for fabricating a memory cell | Electricity | 40 | Expired |
| US6548861B2 | Memory cell, memory cell arrangement and fabrication method | Electricity | 34 | Expired |
| US7790516B2 | Method of manufacturing at least one semiconductor component and memory cells | Electricity | 31 | Active |
| US6674132B2 | Memory cell and production method | Electricity | 29 | Expired |
| US6972226B2 | Charge-trapping memory cell array and method for production | Electricity | 29 | Expired |
| US5306647A | Method for manufacturing a solar cell from a substrate wafer | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6673677B2 | Method for manufacturing a multi-bit memory cell | Emerging Cross-Sectional Technologies | 27 | Expired |
| US7365382B2 | Semiconductor memory having charge trapping memory cells and fabrication method thereof | Electricity | 27 | Expired |
| US4774206A | Method for the manufacture of a self-aligned metal contact | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4889827A | Method for the manufacture of a MESFET comprising self aligned gate | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7087950B2 | Flash memory cell, flash memory device and manufacturing method thereof | Electricity | 21 | Expired |
| US7119395B2 | Memory cell with nanocrystals or nanodots | Electricity | 21 | Expired |
| US6316315A | Method for fabricating a memory cell having a MOS transistor | Electricity | 20 | Expired |
| US6040995A | Method of operating a storage cell arrangement | Electricity | 19 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.