P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
US4775425A · kind A · utility
277Cited by
3References
32Claims
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Key dates
| Filing date | Jul 27, 1987 |
| Grant date | Oct 4, 1988 |
| Priority date | — |
| Expiry date | Jul 27, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S420/903
Abstract
An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.