Process for stripping light-hardened photoresist layers

US4776892A · kind A · utility

Assignee

• Hoechst GmbH · DE

Inventors

• Hartmut Steppan · Wiesbaden, DE
• Ulrich Geissler · Hochheim, DE

Key dates

• Filing date: Aug 22, 1986
• Grant date: Oct 11, 1988
• Expiry date: Aug 22, 2006

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/425
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Light-hardened photoresist layers are stripped by treating the layer with an aqueous solution of an organic quaternary ammonium base and, optionally a strong inorganic base. The resulting layer residues are dispersed as relatively small flakes which do not become lodged between conducting paths.