Electron cyclotron resonance plasma source
US4778561A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 30, 1987 |
| Grant date | Oct 18, 1988 |
| Priority date | — |
| Expiry date | Oct 30, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/18
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron cyclotron resonance (ECR) plasma source for generating a plasma for etching, deposition, pre-deposition and material property modification processes. The plasma source includes two magnetic field sources. The first magnetic field source provides a magnetic field of sufficient intensity to achieve an ECR condition for a given microwave frequency input beam. The second magnetic field source enhances the uniformity of the plasma formed and the uniformity of the output by creating a uniform field region in the plasma generating chamber. The second magnetic field source also reduces the magnetic field so that the plasma near the extraction system and the output extracted are less magnetized. The magnetic field intensity, longitudinal position, radial position and pole orientation are design variables for adjusting the second magnetic field source to enhance uniformity and reduce the magnetization of the output. The ECR plasma source also includes a window apparatus which electrically isolates the plasma generating chamber which is at a high potential from the microwave source near ground potential. The window apparatus is cooled and also serves as a pressure isolator between…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.