Passivation with a low oxygen interface
US4778776A · kind A · utility
12Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1986 |
| Grant date | Oct 18, 1988 |
| Priority date | — |
| Expiry date | Jul 7, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/912
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for depositing oxygen doped semi-insulating polycrystalline silicon (SIPOS) as a passivation layer over the junction of a semiconductor silicon substrate in which the substrate is subjected to an oxygen removal step immediately prior to the creation of the SIPOS layer to thereby prevent the creation of an oxide layer at the interface between the SIPOS and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.