Dislocation-free epitaxial growth in radio-frequency heating reactor
US4780174A · kind A · utility
Inventors
Key dates
| Filing date | Dec 5, 1986 |
| Grant date | Oct 25, 1988 |
| Priority date | — |
| Expiry date | Dec 5, 2006 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is described for solving the long-standing problem of the generation of slip lines and dislocations during epitaxial deposition onto monocrystalline substrates, chiefly silicon, in a radio-frequency heating reactor. The method involves inserting a pad wafer, which is of the same material and dimension as the substrate, into a flat-bottom recess and over a coaxial flat-bottom depression when on the upper side of the susceptor which allows uniform heating of the monocrystalline substrate. By proper adjustment of the depth thereby eliminating diameter of recess and depression respectively, the occurrence of a radial temperature gradient in the heated substrate can be minimized, and the slip line and the dislocation in the epitaxial deposited wafers up to given maximum dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.