Shan-Ming Lan
24Patents
5h-index
23Co-inventors
69Inventor score
Filing activity: Dec 5, 1986 → Aug 6, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4780174A | Dislocation-free epitaxial growth in radio-frequency heating reactor | Chemistry; Metallurgy | 16 | Expired |
| US7358101B2 | Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7009214B2 | Light-emitting device with a current blocking structure and method for making the same | Electricity | 10 | Expired |
| US7615492B2 | Preparing method of CNT-based semiconductor sensitized solar cell | Emerging Cross-Sectional Technologies | 7 | Active |
| US7635603B2 | Method for making red-light emitting diode having silicon quantum dots | Emerging Cross-Sectional Technologies | 5 | Active |
| US6100168A | Location selective transmutation doping on silicon wafers using high energy deuterons | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7399654B2 | Method for fabricating optical sensitive layer of solar cell having silicon quantum dots | Emerging Cross-Sectional Technologies | 3 | Active |
| US7271021B2 | Light-emitting device with a current blocking structure and method for making the same | Electricity | 2 | Expired |
| US7115427B2 | Red light-emitting device and method for preparing the same | Electricity | 1 | Expired |
| US7863080B1 | Process for making multi-crystalline silicon thin-film solar cells | Emerging Cross-Sectional Technologies | 1 | Active |
| US7896723B2 | Method for making a silicon quantum dot fluorescent lamp | Electricity | 1 | Active |
| US7851249B2 | Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer | Emerging Cross-Sectional Technologies | 1 | Active |
| US7163902B2 | Infra-red light-emitting device and method for preparing the same | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7666706B2 | Method for making a thin-film poly-crystalline silicon solar cell on an indium tin oxide-glass substrate at a low temperature | Emerging Cross-Sectional Technologies | 0 | Active |
| US7892953B2 | Method for making multi-crystalline film of solar cell | Emerging Cross-Sectional Technologies | 0 | Active |
| US7863078B2 | Method for making an anti-reflection film of a solar cell | Emerging Cross-Sectional Technologies | 0 | Active |
| US7622397B2 | InN/TiO2 photosensitized electrode | Emerging Cross-Sectional Technologies | 0 | Active |
| US8053038B2 | Method for making titanium-based compound film of poly silicon solar cell | Emerging Cross-Sectional Technologies | 0 | Active |
| US8852995B1 | Preparation method for patternization of metal electrodes in silicon solar cells | Emerging Cross-Sectional Technologies | 0 | Active |
| US7655575B2 | InN/InP/TiO2 photosensitized electrode | Emerging Cross-Sectional Technologies | 0 | Active |
| US7883387B2 | Pulsed high-voltage silicon quantum dot fluorescent lamp | Electricity | 0 | Active |
| US7569864B2 | Silicon-rich-oxide white light photodiode | Electricity | 0 | Active |
| US7915068B2 | Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles | Emerging Cross-Sectional Technologies | 0 | Active |
| US7485560B2 | Method for fabricating crystalline silicon thin films | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.