Process for making a transmission mask
US4780382A · kind A · utility
24Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1986 |
| Grant date | Oct 25, 1988 |
| Priority date | — |
| Expiry date | Nov 13, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/167
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.