Bipolar transistor and method of manufacturing the same
US4780427A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1987 |
| Grant date | Oct 25, 1988 |
| Priority date | — |
| Expiry date | Sep 29, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor includes collector, base and emitter regions. The collector region consists of a first semiconductor region of a first conductivity type and formed in contact with a surface of a semiconductor layer. The base region consists of a second semiconductor region of a second conductivity type formed within the collector region to be in contact with the surface of the semiconductor layer. The emitter region consists of a third semiconductor region of the first conductivity type formed within the base region to be in contact with the surface of the semiconductor layer. The transistor also includes collector, base, and emitter electrodes. The collector and base electrodes are connected to the collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of the semiconductor layer. The collector and base electrodes consist of a conductor. The emitter electrode is connected to the emitter region and consists of a conductor. The transistor further includes first and second insulating interlayers. The first insulating interlayer is formed between the collector and emitter electrodes. The second insulating interlayer …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.