Semiconductor laser device having little astigmatism
US4780879A · kind A · utility
8Cited by
0References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1987 |
| Grant date | Oct 25, 1988 |
| Priority date | — |
| Expiry date | Feb 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1064
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.