Process of fabricating a semiconductor insulated circuit device having a phosphosilicate glass insulating film
US4782037A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 30, 1986 |
| Grant date | Nov 1, 1988 |
| Priority date | — |
| Expiry date | Oct 30, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.