Method for evaluating processing parameters in the manufacture of semiconductor devices
US4782288A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 24, 1986 |
| Grant date | Nov 1, 1988 |
| Priority date | — |
| Expiry date | Dec 24, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R17/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This method, allowing pointing out of the effects of one manufacture parameter independently from other parameters and phenomena and yielding very high precision in measurement, comprises a first step in which a symmetrical resistive bridge is formed, comprising a pair of test resistive arms having topological characteristics related to the process or phenomenon to be evaluated and a pair of reference resistive arms. Each pair of arms is formed by two reciprocally counterposed resistors with identical topography and value. The method furthermore comprises a second step in which a current, having a known value, is applied to the bridge, the voltages present in suitable points of the bridge are measured, and the difference in conductance between the pair of test resistive arms and the reference arms is calculated according to the known or calculated current and voltage values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.