SGS Microelettronica S.p.A.
114Patents
0Active
114Granted
42Portfolio score
Filing activity: Sep 27, 1984 → Oct 22, 1990
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4920510A | Sample data band-pass filter device | Electricity | 102 | Expired |
| US4887142A | Monolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabrication | Electricity | 87 | Expired |
| US4871963A | Method and apparatus for testing EPROM type semiconductor devices during burn-in | Physics | 56 | Expired |
| US4888307A | Method for manufacturing plastic encapsulated semiconductor devices | Emerging Cross-Sectional Technologies | 48 | Expired |
| US4774198A | Self-aligned process for fabricating small DMOS cells | Electricity | 40 | Expired |
| US4811282A | Retiming circuit for pulse signals, particularly for microprocessor peripherals | Electricity | 40 | Expired |
| US4816883A | Nonvolatile, semiconductor memory device | Electricity | 39 | Expired |
| US4782288A | Method for evaluating processing parameters in the manufacture of semiconductor devices | Physics | 39 | Expired |
| US4887149A | Semiconductor device mounted in a highly flexible, segmented package, provided with heat sink | Electricity | 39 | Expired |
| US4780431A | Process for making structures including E2PROM nonvolatile memory cells with self-aligned layers of silicon and associated transistors | Electricity | 39 | Expired |
| US4725769A | Current limited for constant current for switching driving devices | Electricity | 38 | Expired |
| US4794349A | Fully differential, CMOS operational power amplifier | Electricity | 36 | Expired |
| US4807018A | Method and package for dissipating heat generated by an integrated circuit chip | Emerging Cross-Sectional Technologies | 36 | Expired |
| US4720641A | Intelligent electrical power device with monolithic integrated circuit | Electricity | 35 | Expired |
| US4789644A | Process for fabrication, by means of epitaxial recrystallization, of insulated-gate field-effect transistors with junctions of minimum depth | Electricity | 35 | Expired |
| US4667393A | Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage | Emerging Cross-Sectional Technologies | 34 | Expired |
| US4673889A | Apparatus and method for muting an output signal in a switching amplifier | Electricity | 34 | Expired |
| US4874965A | Circuital device for the power-on reset of digital integrated circuits in MOS technology | Electricity | 33 | Expired |
| US4703249A | Stabilized current generator with single power supply, particularly for MOS integrated circuits | Physics | 31 | Expired |
| US4703552A | Fabricating a CMOS transistor having low threshold voltages using self-aligned silicide polysilicon gates and silicide interconnect regions | Emerging Cross-Sectional Technologies | 31 | Expired |
| US4817012A | Method for identification of parasitic transistor devices in an integrated structure | Physics | 28 | Expired |
| US4730168A | CMOS output stage with large voltage swing and with stabilization of the quiescent current | Electricity | 28 | Expired |
| US4916085A | MOS power structure with protective device against overvoltages and manufacturing process therefor | Electricity | 27 | Expired |
| US4799042A | Apparatus and method for offset voltage correction in an analog to digital converter | Electricity | 26 | Expired |
| US4808261A | Fabrication process for EPROM cells with oxide-nitride-oxide dielectric | Electricity | 25 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.