Source drain doping technique
US4784965A · kind A · utility
28Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1987 |
| Grant date | Nov 15, 1988 |
| Priority date | — |
| Expiry date | Sep 16, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
Abstract
A method of forming metal oxide semiconductor field-effect transistors (MOSFET) is described wherein the source and drain regions are disposed by ion implantation in a manner substantially perpendicular to the substrate surface in two steps, such that the concentration of impurities increases with lateral distance away from the gate electrode member to suppress the hot e injection, to prevent channeling effect, to increase punch through voltage and to increase gate-aided breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.