Static random access memory having structure of first-, second- and third-level conductive films
US4785342A · kind A · utility
22Cited by
2References
22Claims
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Key dates
| Filing date | Jan 29, 1987 |
| Grant date | Nov 15, 1988 |
| Priority date | — |
| Expiry date | Jan 29, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/10
Abstract
A resistance element having a reduced occupied area and a high resistance which may be employed as a load resistor used in, for example, a static memory device. A high-resistance area is formed using a relatively thin film, while an interconnection area is formed using a relatively thick film, and these films are provided in such a manner that the thin film is in contact with the upper side of the thick film (the relatively thick film is a first-level film, and the relatively thin film is a second-level film).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.