Xenon enhanced plasma etch
US4786359A · kind A · utility
75Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1987 |
| Grant date | Nov 22, 1988 |
| Priority date | — |
| Expiry date | Jun 24, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etch process and apparatus is disclosed in which a gas mixture comprises CF.sub.3 Br, xenon or krypton, and oxygen. The plasma reactor includes a sacrificial element, preferably in the form of a graphite ring, on the lower electrode of a parallel plate reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.