Method of chemically etching TiW and/or TiWN
US4787958A · kind A · utility
38Cited by
8References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 28, 1987 |
| Grant date | Nov 29, 1988 |
| Priority date | — |
| Expiry date | Aug 28, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of chemically etching TiW and/or TiWN is described wherein the etching of a semiconductor substrate having a layers of TiWN, TiW and Au disposed between the substrate and a Au bump is performed with a 30% solution of hydrogen peroxide (H.sub.2 O.sub.2) at a temperature of approximately 90.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.