Method for vapor phase deposition of gallium nitride film
US4792467A · kind A · utility
37Cited by
10References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 17, 1987 |
| Grant date | Dec 20, 1988 |
| Priority date | — |
| Expiry date | Aug 17, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/303
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula: EQU H.sub.3 GaNR.sub.3 Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. The source compound is conveyed into a deposition chamber containing a substrate. The source compound, maintained in the gaseous phase, decomposes in the deposition chamber and optionally reacts with other materals in the deposition chamber. Gallium nitride is deposited on the substrate as a result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.