Andreas A. Melas
9Patents
6h-index
6Co-inventors
56Inventor score
Filing activity: Dec 9, 1982 → Dec 16, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4792467A | Method for vapor phase deposition of gallium nitride film | Chemistry; Metallurgy | 37 | Expired |
| US4734514A | Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical vapor deposition | Chemistry; Metallurgy | 30 | Expired |
| US4506815A | Bubbler cylinder and dip tube device | Chemistry; Metallurgy | 18 | Expired |
| US4741894A | Method of producing halide-free metal and hydroxides | Chemistry; Metallurgy | 17 | Expired |
| US5147688A | MOCVD of indium oxide and indium/tin oxide films on substrates | Chemistry; Metallurgy | 11 | Expired |
| US4720560A | Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition | Chemistry; Metallurgy | 11 | Expired |
| US4740606A | Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films | Chemistry; Metallurgy | 6 | Expired |
| US7341628B2 | Method to reduce crystal defects particularly in group III-nitride layers and substrates | Emerging Cross-Sectional Technologies | 2 | Expired |
| US5120676A | Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.