MOS programmable memories using a metal fuse link and process for making the same
US4792835A · kind A · utility
35Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 5, 1986 |
| Grant date | Dec 20, 1988 |
| Priority date | — |
| Expiry date | Dec 5, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for making a metal fuse link in a MOS or CMOS process which includes depositing a refractory metal or metal alloy over an already deposited multi-level oxide and patterning the deposited metal or metal alloy so that it has a fusing segment between and integral with expanded segments such that the length and cross sectional area of the fusing segment is sufficiently small so that the fusing current therethrough is less than 20 milliamperes. The fuse and surrounding circuitry is covered with a passivation layer and contacts formed in the passivation layer to the expanded segments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.