Toan Tran
13Patents
7h-index
22Co-inventors
66Inventor score
Filing activity: Dec 5, 1986 → Nov 1, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5546433A | Digital phase lock loop having frequency offset cancellation circuitry | Electricity | 105 | Expired |
| US5065208A | Integrated bipolar and CMOS transistor with titanium nitride interconnections | Electricity | 70 | Expired |
| US5432476A | Differential to single-ended converter | Electricity | 64 | Expired |
| US4792835A | MOS programmable memories using a metal fuse link and process for making the same | Electricity | 35 | Expired |
| US8824085B2 | Laser power control in a heat-assisted magnetic recording system | Physics | 19 | Active |
| US5408694A | Receiver squelch circuit with adjustable threshold | Electricity | 11 | Expired |
| US7772867B2 | Structures for testing and locating defects in integrated circuits | Electricity | 9 | Active |
| US6687973B2 | Optimized metal fuse process | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7560792B2 | Reliable high voltage gate dielectric layers using a dual nitridation process | Electricity | 4 | Active |
| US5418821A | Method and apparatus for sample-data receiver squelch | Electricity | 3 | Expired |
| US5766369A | Method to reduce particulates in device manufacture | Physics | 3 | Expired |
| US7183165B2 | Reliable high voltage gate dielectric layers using a dual nitridation process | Electricity | 2 | Expired |
| US7345001B2 | Gate dielectric having a flat nitrogen profile and method of manufacture therefor | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.