Apparatus for chemical vapor deposition with clean effluent and improved product yield
US4793283A · kind A · utility
Inventor
Key dates
| Filing date | Dec 10, 1987 |
| Grant date | Dec 27, 1988 |
| Priority date | — |
| Expiry date | Dec 10, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45591
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for chemical vapor deposition of a material onto the surface of a substrate wherein an inner reactor tube is disposed within an outer furnace tube to provide a plenum chamber between the two tubes. The reactor tube is provided with a series of axially arranged openings to provide gas communication between the inside of the reactor tube and the plenum chamber. Structure is provided for introducing a first reactant gas into the plenum chamber from which a portion passes into the reactor chamber and structure is provided for introducing a second reactant gas directly into the reactor chamber, where a portion reacts with the first reactant gas to deposit a layer of material on substrates present in the reactor chamber. Separate lines are provided for exhausting unreacted first reactant gases from the plenum chamber and for exhausting unreacted second reactant gases from the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.