Selective thin film etch process
US4793897A · kind A · utility
291Cited by
3References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1987 |
| Grant date | Dec 27, 1988 |
| Priority date | — |
| Expiry date | Mar 20, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma process using a reactant gas mixture of fluorinated etching gas and oxygen for selectively etching a thin film of material such as silicon nitride with high selectivity for a silicon oxide underlayer and, preferably, for a photoresist overlayer mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.