Semiconductor device
US4794445A · kind A · utility
11Cited by
1References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1987 |
| Grant date | Dec 27, 1988 |
| Priority date | — |
| Expiry date | Jul 29, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a structure in which two semiconductor substrates are coupled to each other through a semiconductor oxide film and a metal silicide film, and a semiconductor element, for example, a bi-polar transistor is formed in the semiconductor substrate on the metal silicide film side, whereby a metal silicide layer having a high melting point is provided beneath one region of the bi-polar transistor for example, an n.sup.+ buried collector layer and in ohmic contact with the n.sup.+ buried collector layer. An electrical isolation between the adjacent semiconductor elements is made by an insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.