Opto-electronic device
US4794606A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1988 |
| Grant date | Dec 27, 1988 |
| Priority date | — |
| Expiry date | Mar 24, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An opto-electronic device has an atomic layer superlattice semiconductor comprising different semiconductor materials periodically piled up, each material having an atomic layer thickness. The superlattice semiconductor has a bandgap different from an alloy semiconductor having equivalently the same composition as the former. In a semiconductor laser, as clad layers, the atomic layer superlattice semiconductor having equivalently the same composition as a Zn.sub.0.42 Cd.sub.0.58 S alloy semiconductor and a larger bandgap than the later is used, and a ZnSe.sub.0.94 S.sub.0.06 alloy semiconductor as an active layer is located between the cladding layers. The double-hetero structure semiconductor laser thus provided can perform the lasing at 470 nm at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.