Plasma etch enhancement with large mass inert gas
US4797178A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 1987 |
| Grant date | Jan 10, 1989 |
| Priority date | — |
| Expiry date | May 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/095
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a process for plasma cleaning and an improved gas mixture for use in a plasma cleaning process. The gas mixture of the present invention includes the normal process gases such as oxygen and carbon tetrafluoride. However, the mixture also includes a small percentage of a large mass inert gas such as Argon or Krypton. This large mass gas molecule mechanically removes any polymerized fluorocarbon that forms on the surface being cleaned thereby significantly enhancing the rate of etch or cleaning. It has been found that five to twenty percent of the inert gas is the preferred range and that ten percent produces optimum results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.