Semiconductor laser
US4797891A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1986 |
| Grant date | Jan 10, 1989 |
| Priority date | — |
| Expiry date | Dec 15, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4075
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different. Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle. The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser. Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet. Moreover, the present invention may be accomplished by disposing…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.