Method for forming Cu In Se.sub.2 films
US4798660A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1986 |
| Grant date | Jan 17, 1989 |
| Priority date | — |
| Expiry date | Dec 22, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.