Semiconductor laser device having a buried heterostructure
US4799227A · kind A · utility
9Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1987 |
| Grant date | Jan 17, 1989 |
| Priority date | — |
| Expiry date | Jun 26, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device having a buried heterostructure which includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a substrate, said multi-layered crystal structure having a striped mesa-portion, a multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each side of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.