Method of forming a thin film by chemical vapor deposition
US4800105A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1987 |
| Grant date | Jan 24, 1989 |
| Priority date | — |
| Expiry date | Jul 17, 2007 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of a chemical vapor deposition wherein a first reactive gas containing a metal element and a second reactive gas containing metal element are fed into a reaction chamber in which at least one substrate is disposed under reduced pressure and said substrate is irradiated by a light beam, so that the growth rate of a thin film containing the metal element which to be formed on the surface of the substrate can be increased with the consumption of the reactive gas containing the metal element which is less than that of the conventional methods. The flows of the reactive gases can be maintained in a laminar flow state with good controllability in the entire area of the vicinity of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.