Tetsuya Ikuta
39Patents
8h-index
23Co-inventors
75Inventor score
Filing activity: Jun 30, 1987 → Dec 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4924807A | Apparatus for chemical vapor deposition | Electricity | 42 | Expired |
| US5244501A | Apparatus for chemical vapor deposition | Electricity | 37 | Expired |
| US4800105A | Method of forming a thin film by chemical vapor deposition | Chemistry; Metallurgy | 28 | Expired |
| US4849260A | Method for selectively depositing metal on a substrate | Electricity | 27 | Expired |
| US4994301A | ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate | Emerging Cross-Sectional Technologies | 26 | Expired |
| US7476338B2 | Phosphor and manufacturing method for the same, and light source | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5851589A | Method for thermal chemical vapor deposition | Chemistry; Metallurgy | 20 | Expired |
| US9006865B2 | Epitaxial growth substrate, semiconductor device, and epitaxial growth method | Electricity | 9 | Active |
| US8426893B2 | Epitaxial substrate for electronic device and method of producing the same | Electricity | 8 | Active |
| US7812516B2 | Light-emitting device and manufacturing method thereof | Electricity | 7 | Active |
| US8847203B2 | Group III nitride epitaxial laminate substrate | Electricity | 5 | Active |
| US11205739B2 | Semiconductor light-emitting device and method of manufacturing the same | Electricity | 4 | Active |
| US8410472B2 | Epitaxial substrate for electronic device and method of producing the same | Electricity | 4 | Active |
| US8253326B2 | Light-emitting device and manufacturing method thereof | Electricity | 3 | Active |
| US7476336B2 | Phosphor and manufacturing method for the same, and light emitting device using the phosphor | Chemistry; Metallurgy | 2 | Expired |
| US8124440B2 | Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging device | Electricity | 2 | Active |
| US10727303B2 | Group III nitride epitaxial substrate and method for manufacturing the same | Electricity | 2 | Active |
| US8469760B2 | Light emitting device and method for producing same | Electricity | 1 | Active |
| US7803286B2 | Phosphor and manufacturing method for the same, and light source | Emerging Cross-Sectional Technologies | 1 | Active |
| US8164254B2 | Light-emitting device and manufacturing method thereof | Electricity | 1 | Active |
| US7531389B2 | Method of manufacturing semiconductor device | Electricity | 1 | Active |
| US8710489B2 | Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same | Electricity | 0 | Active |
| US7878876B2 | Light emitting device and method for producing same | Electricity | 0 | Active |
| US7956536B2 | Light emitting device and method for producing same | Electricity | 0 | Active |
| US8049248B2 | Semiconductor device including thyristor and method of manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.