Semiconductor laser device having high optical intensity and reliability
US4800565A · kind A · utility
6Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1987 |
| Grant date | Jan 24, 1989 |
| Priority date | — |
| Expiry date | Sep 9, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a semiconductor laser wherein an interface layer is provided on an upper cladding layer formed on an active layer, the interface layer having a smaller Al mole ratio than that of the upper cladding layer, thereby preventing oxidation of the semiconductor surface which is exposed to the atmosphere, and thus improving the crystallizability of a semiconductor layer which is to be formed subsequently. By setting the refractive index of this semiconductor layer so as to be smaller than that of the upper cladding layer, light can be confined in the active layer at increased efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.