Coated mask for photolithographic construction of electric circuits
US4803110A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1986 |
| Grant date | Feb 7, 1989 |
| Priority date | — |
| Expiry date | Sep 15, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A mask for deposition of electrically-conductive paste material on a ceramic base, in the construction of electric circuits having multiple electronic chips is formed of molybdenum with a titanium nitride coating. The coating passes through apertures of a mesh on one side of the mask and continues through the apertures to appear in cutouts of stencils along the opposite side of the mask. Other elements of the fourth group of the periodic table, such as zirconium, may be employed in lieu of the titanium in the formation of the coating. The coating is uniformly applied by a sputtering procedure in which nitrogen is sprayed uniformly along the mask and away from a titanium target. In an argon plasma, the nitrogen and the titanium are sputtered onto the molybdenum where the titanium and nitrogen combine to form the coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.