Inventor · Chappaqua, NY, US

Kie Y. Ahn

615Patents
86h-index
38Co-inventors
90Inventor score

Filing activity: Mar 5, 1975 → Jan 7, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US7045430B2 Atomic layer-deposited LaAlO3 films for gate dielectrics Electricity 670 Expired
US7135421B2 Atomic layer-deposited hafnium aluminum oxide Electricity 632 Expired
US7235501B2 Lanthanum hafnium oxide dielectrics Electricity 628 Expired
US7192824B2 Lanthanide oxide / hafnium oxide dielectric layers Electricity 605 Expired
US7192892B2 Atomic layer deposited dielectric layers Electricity 598 Expired
US7312494B2 Lanthanide oxide / hafnium oxide dielectric layers Electricity 579 Expired
US7405454B2 Electronic apparatus with deposited dielectric layers Electricity 564 Expired
US7393736B2 Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics Electricity 558 Expired
US7902582B2 Tantalum lanthanide oxynitride films Electricity 505 Active
US6150687A Memory cell having a vertical transistor with buried source/drain and dual gates Electricity 324 Expired
US6570248B1 Structure and method for a high-performance electronic packaging assembly Electricity 310 Expired
US6689660B1 4 F2 folded bit line DRAM cell structure having buried bit and word lines Electricity 280 Expired
US6514828B2 Method of fabricating a highly reliable gate oxide Electricity 264 Expired
US6072209A Four F.sup.2 folded bit line DRAM cell structure having buried bit and word lines Electricity 256 Expired
US5909618A Method of making memory cell with vertical transistor and buried word and body lines Electricity 241 Expired
US6281042A Structure and method for a high performance electronic packaging assembly Electricity 239 Expired
US6921702B2 Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics Emerging Cross-Sectional Technologies 229 Expired
US6424001B1 Flash memory with ultra thin vertical body transistors Electricity 214 Expired
US6495436B2 Formation of metal oxide gate dielectric Electricity 190 Expired
US6534420B2 Methods for forming dielectric materials and methods for forming semiconductor devices Electricity 189 Expired
US6274937A Silicon multi-chip module packaging with integrated passive components and method of making Electricity 186 Expired
US5981350A Method for forming high capacitance memory cells Emerging Cross-Sectional Technologies 180 Expired
US6514820B2 Method for forming single electron resistor memory Emerging Cross-Sectional Technologies 163 Expired
US6767795B2 Highly reliable amorphous high-k gate dielectric ZrOXNY Electricity 163 Expired
US6778441B2 Integrated circuit memory device and method Electricity 158 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.