Semiconductor device sram to prevent out-diffusion
US4803534A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1986 |
| Grant date | Feb 7, 1989 |
| Priority date | — |
| Expiry date | Jun 18, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first conductor layer into which is diffused an impurity for lowering the resistance, and a second conductor layer provided on the upper side of the first conductor layer through a stopper layer which suppresses out-diffusion of the impurity. By virtue of the existence of the stopper layer, it is possible to inhibit the above-described impurity from being diffused into the second conductor layer. In a SRAM, resistance variations between high-resistance elements which correspond to the second conductor layer can be suppressed, so that it is possible to prevent lowering of the yield with respect to the electrical reliability. In a SRAM, further, the resistance of the high-resistance elements is not lowered; therefore, it is possible to reduce the power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.