Silicon-on-insulator substrates annealed in polysilicon tube
US4804633A · kind A · utility
11Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 1988 |
| Grant date | Feb 14, 1989 |
| Priority date | — |
| Expiry date | Feb 18, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator substrate having a very low threading dislocation density is made by implanting oxygen ions into a silicon substrate while heating the substrate to form a layer of silicon dioxide buried in the silicon substrate and annealing the implanted substrate at high temperature in a novel furnace incorporating a polysilicon tube to constrain the annealing temperature to be uniform over the entire substrate. The silicon-on-insulator substrate is particularly useful for the manufacture of semiconductor devices formed in thin silicon films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.