Thomas MacElwee
24Patents
6h-index
34Co-inventors
69Inventor score
Filing activity: May 17, 1984 → Jul 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4651408A | Fabrication of stacked MOS devices utilizing lateral seeding and a plurality of separate implants at different energies | Emerging Cross-Sectional Technologies | 69 | Expired |
| US5703980A | Method for low-loss insertion of an optical signal from an optical fibre to a waveguide integrated on to a semiconductor wafer | Physics | 45 | Expired |
| US7679102B2 | Carbon passivation in solid-state light emitters | Electricity | 25 | Active |
| US5296726A | High value resistive load for an integrated circuit | Emerging Cross-Sectional Technologies | 20 | Expired |
| US4680609A | Structure and fabrication of vertically integrated CMOS logic gates | Electricity | 16 | Expired |
| US4804633A | Silicon-on-insulator substrates annealed in polysilicon tube | Electricity | 11 | Expired |
| US8089080B2 | Engineered structure for high brightness solid-state light emitters | Electricity | 5 | Active |
| US7888686B2 | Pixel structure for a solid state light emitting device | Electricity | 4 | Active |
| US10283501B2 | GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof | Electricity | 4 | Active |
| US8093604B2 | Engineered structure for solid-state light emitters | Emerging Cross-Sectional Technologies | 3 | Active |
| US10249506B2 | GaN-on-si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof | Electricity | 3 | Active |
| US7839467B2 | Color Tuneable electroluminescent devices | Physics | 2 | Active |
| US7800117B2 | Pixel structure for a solid state light emitting device | Emerging Cross-Sectional Technologies | 2 | Active |
| US8198638B2 | Light emitting device structure and process for fabrication thereof | Electricity | 2 | Active |
| US8232611B2 | High quality gate dielectric for semiconductor devices and method of formation thereof | Electricity | 2 | Active |
| US7923925B2 | Light emitting device with a stopper layer structure | Electricity | 2 | Active |
| US7616272B2 | Electroluminescent films for backlighting liquid crystal displays | Physics | 2 | Active |
| US10796998B1 | Embedded packaging for high voltage, high temperature operation of power semiconductor devices | Electricity | 1 | Active |
| US12352801B2 | Wafer testing for current property of a power transistor | Electricity | 0 | Active |
| US12382652B2 | Transistor structure using multiple two-dimensional channels | Electricity | 0 | Active |
| USRE49603E1 | GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof | General | 0 | Active |
| US12385953B2 | Current sensing by using aging sense transistor | Electricity | 0 | Active |
| US11676899B2 | Embedded packaging for high voltage, high temperature operation of power semiconductor devices | Electricity | 0 | Active |
| US10985259B2 | GaN HEMT device structure and method of fabrication | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.