Ion implantation surface charge control method and apparatus
US4804837A · kind A · utility
71Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1988 |
| Grant date | Feb 14, 1989 |
| Priority date | — |
| Expiry date | Jan 11, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion beam neutralizer. High energy electrons are directed through an ion beam neutralizing zone or region containing an ionizable gas. As the high energy electrons collide with the gas molecules, they ionize the gas molecules and produce low energy electrons which are trapped by a positively charged ion beam. As high energy electrons pass out of the neutralizing zone they are deflected back to the neutralizing zone by a cylindrical conductor biased to deflect the high energy electrons and an accelerating grid for accelerating the electrons back through the beam neutralizing zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.