Fabrication process for EPROM cells with oxide-nitride-oxide dielectric
US4808261A · kind A · utility
25Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1987 |
| Grant date | Feb 28, 1989 |
| Priority date | — |
| Expiry date | Apr 20, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
The process calls for covering of the dielectric with a thin additional layer of polysilicon which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.