Anode plate for a parallel-plate reactive ion etching reactor
US4810322A · kind A · utility
10Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1986 |
| Grant date | Mar 7, 1989 |
| Priority date | — |
| Expiry date | Nov 3, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32431
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An anode for a reactive ion etching (RIE) system has a plurality of holes formed therethrough. The holes produce a plasma glow about each hole which results in an increase in the etch rate of wafers to be etched on a cathode opposite the holes. The holes are arranged in the anode to provide a uniform etch rate on one wafer or a batch of wafers to be etched. By varying the pressure in the system, the presence of plasma glow and hence the etch rate uniformity is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.