Oxide deposition method
US4810673A · kind A · utility
103Cited by
5References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 18, 1986 |
| Grant date | Mar 7, 1989 |
| Priority date | — |
| Expiry date | Sep 18, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon dioxide is deposited by low pressure chemical vapor deposition (LPCVD) from dichlorosilane plus nitrous oxide, using a larger concentration of dichlorosilane than of nitrous oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.