Dean W. Freeman
13Patents
11h-index
11Co-inventors
58Inventor score
Filing activity: Sep 18, 1986 → Oct 14, 1989
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4916091A | Plasma and plasma UV deposition of SiO.sub.2 | Electricity | 469 | Expired |
| US4911103A | Processing apparatus and method | Chemistry; Metallurgy | 104 | Expired |
| US4810673A | Oxide deposition method | Emerging Cross-Sectional Technologies | 103 | Expired |
| US4863561A | Method and apparatus for cleaning integrated circuit wafers | Emerging Cross-Sectional Technologies | 73 | Expired |
| US4988533A | Method for deposition of silicon oxide on a wafer | Chemistry; Metallurgy | 50 | Expired |
| US4822450A | Processing apparatus and method | Chemistry; Metallurgy | 45 | Expired |
| US4910043A | Processing apparatus and method | Electricity | 40 | Expired |
| US4906328A | Method for wafer treating | Emerging Cross-Sectional Technologies | 30 | Expired |
| US4832778A | Processing apparatus for wafers | Electricity | 28 | Expired |
| US4877753A | In situ doped polysilicon using tertiary butyl phosphine | Emerging Cross-Sectional Technologies | 14 | Expired |
| US4882299A | Deposition of polysilicon using a remote plasma and in situ generation of UV light. | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5023206A | Semiconductor device with adjacent non-oxide layers and the fabrication thereof | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5096856A | In-situ doped silicon using tertiary butyl phosphine | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.