Fracturable x-y storage array using a ram cell with bidirectional shift
US4813015A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1986 |
| Grant date | Mar 14, 1989 |
| Priority date | — |
| Expiry date | Mar 12, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A fracturable x-y random access memory array for performing pushing and popping of data and fracturing the array simultaneously at a common address includes a row fracture circuit responsive to row addresses to fracture the array in the Y-direction and a column fracture circuit responsive to column addresses for fracturing the array in the X-direction. A plurality of memory cells are stacked in a plurality of columns to form an x-y organization which can be randomly accessed in response to the row and column addresses. The memory cells are responsive to a shift control driver circuit for bidirectional shifting of data by either pushing data into or popping data from at any point within one of the plurality of randomly addressable column at the same row and column addresses used to fracture the array defining a fracture point. Data in all of the memory cells in the array with addresses higher (or lower) than the fracture point shift and the memory cells with addresses lower (or higher) than the fracture point maintain their data unchanged.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.